Control/Communicators

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Single & Dual Output Miniature, 1W SIP DC/DC Converters

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丝印代码：D1265C6；650V SiC Schottky Diode

Features  Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Potential Applications  Power factor correction in SMPS  Solar inverter  Uninterruptible power supply

丝印代码：D1265C5；Silicon Carbide Diode

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Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

CCD Vertical Clock Driver

CCD Vertical Clock Driver Description The CXD1267AN is a vertical clock driver for CCD image sensors. This IC is the successor of the CXD1250N with attractive features. Power consumption is reduced approximately 30 for the CXD1267AN version. Features 1) Substrate voltage (Vsub

High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion)

The H8S/2678, 2678R Group is supported only for customers who have already adopted these products. The RX651 Group is recommended for new designs.

High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion)

The H8S/2678, 2678R Group is supported only for customers who have already adopted these products. The RX651 Group is recommended for new designs.

Airfast RF Power GaN Transistor

Fixed Inductors for Surface Mounting

FEATURES • 12.8mm Max. square and 6.7mm Max. height. • Magnetically shielded construction and low DC resistance. • Suitable for large current. • Ideal for DC-DC converter inductor applications in hand held personal computer, etc. • RoHS compliant.

Low Cost, 1W SIP Single & Dual Output DC/DC Converters

Low Cost, 1W SIP Single & Dual Output DC/DC Converters Key Features: •1W Output Power •Miniature SIP Case •UL Approved (File E245422) •Single & Dual Outputs •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models • LOWEST COST!!

Low Cost, 1W SIP High Isolation DC/DC Converters

Low Cost, 1W High Isolation SIP DC/DC Converters Key Features: ● 1W Output Power ● 3,000 VDC Isolation ● Miniature SIP Case ● Single & Dual Outputs ● >1 MHour MTBF ● 24 Standard Models ● LOWEST COST!!

Low Cost, 1W High Isolation SIP DC/DC Converters

[MPD] Low Cost, 1W High Isolation SIP DC/DC Converters Key Features: ● 1W Output Power ● 3,000 VDC Isolation ● Miniature SIP Case ● Single & Dual Outputs ● >1 MHour MTBF ● 24 Standard Models ● LOWEST COST!!

Low Cost, 1W SIP Tightly Regulated DC/DC Con vert ers

Low Cost, 1W SIP Tightly Regulated DC/DC Converters Key Features: •1W Output Power •Tightly Regulated •Single & Dual Outputs •Miniature SIP Case •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models •Industry Standard Pin-Out •LOWEST COST!!

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters Key Features: •1W Output Power •2:1 Input Voltage Range •1,500 VDC Isolation •Short Circuit Protected •Miniature SIP Case •Single & Dual Outputs •1.0 MH MTBF •Industry Standard Pin-Out • Low Low Cost!!

METAL GATE RF SILICON FET

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RF Power LDMOS Transistor

METAL GATE RF SILICON FET

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Silicon Carbide Diode

文件：1.17456 Mbytes Page：11 Pages

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

CCD Vertical Clock Driver

7mm Series Metal Oxide Varistors

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Power Rectifier Diodes

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封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：DIODE GEN PURP 4.5KV 200A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：DIODE GEN PURP 4.5KV 200A 分立半导体产品 二极管 - 整流器 - 单

Miniature, 1W SIP Dual Isolated Output DC/DC Con vert ers

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High Isolation Miniature, 1W SIP DC/DC Converters

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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