丝印代码：BSP126；N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. APPLICATIONS · Line current interruptor in telephone sets · Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT2

N-channel vertical D-MOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

N-Channel Enhancement Mode MOSFET

Application | « Adaptor | » Charger « Power management | « SMPS Standby Power

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

文件：45.28 Kbytes Page：2 Pages