丝印代码：BSP126；N-channel enhancement mode vertical D-MOS transistor

FEATURES · Direct interface to C-MOS, TTL, etc. · High-speed switching · No secondary breakdown. APPLICATIONS · Line current interruptor in telephone sets · Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT2

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

N-channel vertical D-MOS logic level FET

N-Channel Enhancement Mode MOSFET

Application | « Adaptor | » Charger « Power management | « SMPS Standby Power

Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current

FEATURES • Extra long useful life: up to 8000 h at 125 °C • Low ESR levels provide very high ripple current capability • Miniaturized, high CV-product per unit volume • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, insulated with

This specification covers the requirements for product performance, test methods and quality assurance provisions of 126B-SERIES

Performance and Descriptions: The product is designed to meet the electrical, mechanical and environmental performance requirements specification. Unless otherwise specified, all tests are performed at ambient environmental conditions.

Temperature Sensors Line Guide

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Aluminum Electrolytic Capacitors Axial High Temperature, High Ripple Current

文件：219.14 Kbytes Page：9 Pages

TUBE DRIVER - INTERSTAGE TRANSFORMER

文件：200.12 Kbytes Page：1 Pages