Low Cost, 1W SIP Single & Dual Output DC/DC Converters

Low Cost, 1W SIP Single & Dual Output DC/DC Converters Key Features: •1W Output Power •Miniature SIP Case •UL Approved (File E245422) •Single & Dual Outputs •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models • LOWEST COST!!

Low Cost, 1W SIP High Isolation DC/DC Converters

Low Cost, 1W High Isolation SIP DC/DC Converters Key Features: ● 1W Output Power ● 3,000 VDC Isolation ● Miniature SIP Case ● Single & Dual Outputs ● >1 MHour MTBF ● 24 Standard Models ● LOWEST COST!!

Low Cost, 1W High Isolation SIP DC/DC Converters

[MPD] Low Cost, 1W High Isolation SIP DC/DC Converters Key Features: ● 1W Output Power ● 3,000 VDC Isolation ● Miniature SIP Case ● Single & Dual Outputs ● >1 MHour MTBF ● 24 Standard Models ● LOWEST COST!!

Low Cost, 1W SIP Tightly Regulated DC/DC Con vert ers

Low Cost, 1W SIP Tightly Regulated DC/DC Converters Key Features: •1W Output Power •Tightly Regulated •Single & Dual Outputs •Miniature SIP Case •1,000 VDC Isolation •>3.5 MHour MTBF •24 Standard Models •Industry Standard Pin-Out •LOWEST COST!!

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters

Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters Key Features: •1W Output Power •2:1 Input Voltage Range •1,500 VDC Isolation •Short Circuit Protected •Miniature SIP Case •Single & Dual Outputs •1.0 MH MTBF •Industry Standard Pin-Out • Low Low Cost!!

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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