| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM 47 Typ at 32.5 dBm for D | RENESAS 瑞萨 |   | ||
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM | RENESAS 瑞萨 | | ||
WIRE FORM FAN GUARD (254mm) 文件：233.02 Kbytes Page：1 Pages | QUALTEK | | ||
Isat is the current at which the inductance drops by 15. 文件：37.03 Kbytes Page：2 Pages | ICE | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
NEW |
QFN |
120000 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS |
2023+ |
功放模块 |
50000 |
原装现货 |
|||
RENESAS |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
|||
HITACHI |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
RENESAS |
22+ |
QFN |
3000 |
原装正品,支持实单 |
|||
RENESAS |
1709+ |
QFN |
900 |
普通 |
|||
RENESAS |
24+ |
RF-Q-8 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
RENESAS |
25+ |
QFN |
3000 |
强调现货,随时查询! |
|||
RENESAS |
24+ |
BGA |
45000 |
||||
Renesas(瑞萨) |
24+ |
标准封装 |
7543 |
支持大陆交货,美金交易。原装现货库存。 |
D08127规格书下载地址
D08127参数引脚图相关
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- D0900
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DdatasheetPDF页码索引
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