Isat is the current at which the inductance drops by 15.

文件：37.03 Kbytes Page：2 Pages

MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM 47 Typ at 32.5 dBm for D

MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max • High efficiency : 55 Typ at 35.0 dBm for E-GSM

WIRE FORM FAN GUARD (254mm)

文件：233.02 Kbytes Page：1 Pages