位置：首页 > IC中文资料第5604页 > PF08127B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PF08127B | MOSFETPowerAmplifierModuleforE-GSMandDCS1800/1900TripleBandHandyPhone Features •Allinoneincludingoutputmatchingcircuit •Simpleexternalcircuit •Simplepowercontrol •Highgain3stageamplifier:0dBminputTyp •Leadlessthin&Smallpackage:8.0×10.0mmTyp×1.5mmMax •Highefficiency:55Typat35.0dBmforE-GSM | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   |
MOSFETPowerAmplifierModuleforE-GSMandDCS1800/1900TripleBandHandyPhone Features •Allinoneincludingoutputmatchingcircuit •Simpleexternalcircuit •Simplepowercontrol •Highgain3stageamplifier:0dBminputTyp •Leadlessthin&Smallpackage:8.0×10.0mmTyp×1.5mmMax •Highefficiency:55Typat35.0dBmforE-GSM 47Typat32.5dBmforD | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
WIREFORMFANGUARD(254mm) 文件：233.02 Kbytes Page：1 Pages | QUALTEK Qualtek Electronics Corporation |  | | |
Isatisthecurrentatwhichtheinductancedropsby15. 文件：37.03 Kbytes Page：2 Pages | ICE ice Components, Ins. |  | |
PF08127B产品属性
- 类型
描述
- 型号
PF08127B
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
QFN |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
RENESAS |
23+ |
QFN |
120000 |
||||
PLCC84 |
05+ |
QFN |
6000 |
绝对原装自己现货 |
|||
RENESAS |
2025+ |
QFN |
32560 |
原装优势绝对有货 |
|||
RENESAS |
23+ |
QFN |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
3844 |
原厂直销,现货供应,账期支持! |
|||
RENESAS |
2023+ |
QFN |
5800 |
进口原装,现货热卖 |
|||
RENESAS |
20+ |
QFN |
3197 |
进口原装现货,假一赔十 |
|||
RENESAS |
23+ |
QFN |
5000 |
原装正品,假一罚十 |
|||
RENESAS |
05+ |
QFN |
29988 |
原装现货海量库存欢迎咨询 |
PF08127B芯片相关品牌
PF08127B规格书下载地址
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DdatasheetPDF页码索引
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