| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.71683 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
INFINEON |
24+ |
TO-252 |
2210 |
||||
INFINEON |
23+ |
TO-263 |
7936 |
||||
INFINEO |
24+ |
TO-263 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
TO263-3-2 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
infineon |
1415+ |
P-TO263-3-2 |
28500 |
全新原装正品,优势热卖 |
|||
INFINEON/英飞凌 |
24+ |
TO263-3-2 |
20000 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
2447 |
SOT263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON/英飞凌 |
23+ |
SOT263 |
50000 |
全新原装正品现货,支持订货 |
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