256 Kb (256K x 1) Static RAM

General Description [1] The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected Features • Fast access t

256-Kb (256 K x 1) Static RAM Fast access time: 15 ns

文件：482.24 Kbytes Page：13 Pages

256Kx1 Static RAM

Functional Description The CY7C197 is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75 when desele

256 Kb (256K x 1) Static RAM

General Description [1] The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected Features • Fast access t

256 Kb (256K x 1) Static RAM

General Description [1] The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected Features • Fast access t

256 Kb (256K x 1) Static RAM

General Description [1] The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected Features • Fast access t

256-Kb (256 K x 1) Static RAM Fast access time: 15 ns

文件：482.24 Kbytes Page：13 Pages

IC SRAM 256K PARALLEL 24SOJ

封装/外壳：24-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 24SOJ 集成电路（IC） 存储器

256-Kb (256 K x 1) Static RAM Fast access time: 15 ns

文件：482.24 Kbytes Page：13 Pages

256-Kb (256 K x 1) Static RAM Fast access time: 15 ns

文件：482.24 Kbytes Page：13 Pages

IC SRAM 256K PARALLEL 24DIP

封装/外壳：24-DIP（0.300"，7.62mm） 包装：托盘 描述：IC SRAM 256KBIT PARALLEL 24DIP 集成电路（IC） 存储器

256 Kb (256K x 1) Static RAM

General Description1 The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Features • Fast access time

256K (256K x 1) Static RAM

Functional Description[1] The CY7C197D is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197D has an automatic power-down feature, reducing the power consumption when deselec