General Description1

The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.

Features

• Fast access time: 12 ns and 25 ns

• Wide voltage range: 5.0V ± 10 (4.5V to 5.5V)

• CMOS for optimum speed/power

• TTL-compatible Inputs and Outputs

• Available in 24 DIP and 24 SOJ