CY7C1380价格

参考价格:¥115.2244

型号:CY7C1380D-167AXC 品牌:Cynergy 3 备注:这里有CY7C1380多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1380批发/采购报价,CY7C1380行情走势销售排行榜,CY7C1380报价。
型号 功能描述 生产厂家 企业 LOGO 操作

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36 / 1 Mb x 18 Pipelined SRAM

文件:860.6 Kbytes Page:30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 18MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

IC SRAM 18M PARALLEL 100TQFP

Infineon

英飞凌

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380产品属性

  • 类型

    描述

  • 型号

    CY7C1380

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Quad 3.3V 18M-Bit 512K x 36 4.2ns 100-Pin TQFP

更新时间:2025-12-17 18:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
20+
QFP
500
样品可出,优势库存欢迎实单
CYRESS?
23+
TQFP
3600
绝对全新原装!现货!特价!请放心订购!
25+
原厂原封装
18000
原厂直接发货进口原装
Cypress(赛普拉斯)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CYPRESS
2015+
SOP/QFP/PLCC
19889
一级代理原装现货,特价热卖!
CYPRESS
18+
QFP
85600
保证进口原装可开17%增值税发票
CYPRESS/赛普拉斯
21+
QFP100
2000
百域芯优势 实单必成 可开13点增值税发票
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
CYPRESS
24+
QFP
330
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货

CY7C1380数据表相关新闻