型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1380C

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

IC SRAM 18M PARALLEL 100TQFP

Infineon

英飞凌

IC SRAM 18M PARALLEL 100TQFP

Infineon

英飞凌

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 18MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

IC SRAM 18M PARALLEL 165FBGA

Infineon

英飞凌

封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380C产品属性

  • 类型

    描述

  • 型号

    CY7C1380C

  • 功能描述

    IC SRAM 18MBIT 133MHZ 100LQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    96

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    FLASH

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    70ns

  • 接口

    并联

  • 电源电压

    2.65 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

更新时间:2025-11-24 10:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
16+
QFP
4000
进口原装现货/价格优势!
CYPRESS
24+
TQFP
90000
进口原装现货假一罚十价格合理
CYPRES
25+
QFP
4500
全新原装、诚信经营、公司现货销售!
CYPREES
24+
NA
5000
全现原装公司现货
CYPRESS
NEW
QFP
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
CYPRESS
20+
TQFP
500
样品可出,优势库存欢迎实单
CYPRESS/赛普拉斯
2403+
TQFP
11809
原装现货!欢迎随时咨询!
CYPRESS/赛普拉斯
24+
TQFP-100
9600
原装现货,优势供应,支持实单!
CYPRESS
22+
QFP
2000
原装正品现货
CYPRESS
22+
TQFP100
8000
原装正品支持实单

CY7C1380C数据表相关新闻