型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1380C

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

IC SRAM 18M PARALLEL 100TQFP

Infineon

英飞凌

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 18MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

IC SRAM 18M PARALLEL 100TQFP

Infineon

英飞凌

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 18MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC SRAM 18M PARALLEL 165FBGA

Infineon

英飞凌

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380C产品属性

  • 类型

    描述

  • 型号

    CY7C1380C

  • 功能描述

    IC SRAM 18MBIT 133MHZ 100LQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    96

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    FLASH

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    70ns

  • 接口

    并联

  • 电源电压

    2.65 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

更新时间:2025-10-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
24+
NA/
3261
原装现货,当天可交货,原型号开票
CYPRES
2003+
QFP100
2520
CYPRESS
NEW
QFP
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
CYPRESS/赛普拉斯
25+
TQFP
11
原装正品,假一罚十!
CYPRESS
25+23+
QFP
24147
绝对原装正品全新进口深圳现货
CYPRESS
22+
TQFP100
8000
原装正品支持实单
CYPRES
25+
QFP
4500
全新原装、诚信经营、公司现货销售!
Cypress
23+
100-LQFP(14x20)
9550
专业分销产品!原装正品!价格优势!
CYP
24+
1440

CY7C1380C数据表相关新闻