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CY7C1360A价格
参考价格：￥118.1457
型号：CY7C1360A-150BGC 品牌：Cynergy 3 备注：这里有CY7C1360A多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C1360A批发/采购报价，CY7C1360A行情走势销售排行榜，CY7C1360A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C1360A | 256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
封装/外壳：119-BGA 包装：管件 描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM 文件：521.48 Kbytes Page：31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C1360A产品属性
- 类型
描述
- 型号
CY7C1360A
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cypress |
23+ |
119-BGA |
65600 |
||||
CYPRESS/赛普拉斯 |
23+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
CYRESS |
24+ |
TQFP |
6980 |
原装现货,可开13%税票 |
|||
CYPRESS |
2138+ |
QFP |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
CY |
2020+ |
QFP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CYPRESS |
22+ |
TQFP |
8000 |
原装正品支持实单 |
|||
CYPRES |
23+ |
QFP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
Cypress |
23+ |
119-PBGA(14x22) |
71890 |
专业分销产品!原装正品!价格优势! |
|||
CYPRESS |
24+ |
QFP |
25 |
||||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
CY7C1360A芯片相关品牌
CY7C1360A规格书下载地址
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CY7C1360A数据表相关新闻
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2020-6-28CY7C1350G-133AXC公司原装现货/长期供应
全新原装
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全新原装
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