CY7C1360A价格

参考价格:¥118.1457

型号:CY7C1360A-150BGC 品牌:Cynergy 3 备注:这里有CY7C1360A多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1360A批发/采购报价,CY7C1360A行情走势销售排行榜,CY7C1360A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1360A

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 36/512K x 18 Synchronous Pipelined Burst SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:119-BGA 包装:管件 描述:IC SRAM 9MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

文件:521.48 Kbytes Page:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1360A产品属性

  • 类型

    描述

  • 型号

    CY7C1360A

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-12-20 11:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CY
24+
QFP
9630
我们只做原装正品现货!量大价优!
CYPRES
25+
QFP
4500
全新原装、诚信经营、公司现货销售!
CY
NEW
QFP
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
CYPRESS
23+
QFP
40521
公司原装现货!主营品牌!可含税欢迎查询
CYPRESS/赛普拉斯
2025+
TQFP
5000
原装进口价格优 请找坤融电子!
CYPRESS/赛普拉斯
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
CY
05+
QFP
70
CYRPESS
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
23+
原厂正规渠道
5000
专注配单,只做原装进口现货

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