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CY7C1360A价格

参考价格：￥118.1457

型号：CY7C1360A-150BGC 品牌：Cynergy 3 备注：这里有CY7C1360A多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C1360A批发/采购报价，CY7C1360A行情走势销售排行榜，CY7C1360A报价。

型号	功能描述	生产厂家企业	LOGO
CY7C1360A	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150AC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150AI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150AJC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150AJI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150BGC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150BGI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AJC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AJI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166BGC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166BGI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200AC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200AI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200AJC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200AJI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200BGC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200BGI	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-225AC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-225AJC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-225BGC	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150BGC	封装/外壳：119-BGA 包装：管件描述：IC SRAM 9MBIT PARALLEL 119PBGA 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360B	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1360A产品属性

类型
描述
型号
CY7C1360A
制造商
Rochester Electronics LLC
功能描述
- Bulk

CY7C1360A供应商更多...

更新时间：2025-10-22 15:35:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	CY7C1360A1-200A	CYPRESS	2023+		5800	进口原装,现货热卖	询价
深圳市恒达亿科技有限公司	CY7C1360A-200AJC	CYPRES	25+	QFP	4500	全新原装、诚信经营、公司现货销售!	询价
深圳市赛尔通科技有限公司	CY7C1360A-150BGC	Cypress	23+	119-BGA	65600		询价
深圳市欧立现代科技有限公司	CY7C1360A-225AJC	CYRESS	24+	TQFP	6980	原装现货,可开13%税票	询价
深圳市宏捷佳电子科技有限公司	CY7C1360A-166AC	CYPRESS	2023+	QFP	50000	原装现货	询价
深圳市胜彬电子有限公司	CY7C1360A-166AC	CYPRESS	22+	TQFP	8000	原装正品支持实单	询价
深圳市壹芯创科技有限公司	CY7C1360A-166AC	CYPRESS	22+	TQFP	2000	原装正品现货	询价
深圳市河锋鑫科技有限公司	CY7C1360A150BGC	Cypress	22+	119PBGA (14x22)	9000	原厂渠道,现货配单	询价
天津市博通航睿技术有限公司	CY7C1360A1-200A	CYPRESS	23+	null	7000		询价
深圳市安富世纪电子有限公司	CY7C1360A	CYPR	23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价

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CY7C1360A价格

CY7C1360A产品属性

CY7C1360A供应商更多...

CY7C1360A芯片相关品牌

CY7C1360A规格书下载地址

CY7C1360A参数引脚图相关

CY7C1360A数据表相关新闻

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CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯

CY7C1350G-133AXC公司原装现货/长期供应

CY7C1354C-166AXI公司原装现货/长期供应

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