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CY7C1360C价格

参考价格：￥75.1252

型号：CY7C1360C-166AXC 品牌：CYPRESS 备注：这里有CY7C1360C多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C1360C批发/采购报价，CY7C1360C行情走势销售排行榜，CY7C1360C报价。

型号	功能描述	生产厂家企业	LOGO
CY7C1360C	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C	9-Mbit (256K x 36/512K x 18) Pipelined SRAM	Infineon 英飞凌	Infineon
CY7C1360	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200AJXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200AJXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200AXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200AXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BGC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BGI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BGXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BGXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BZC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BZI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BZXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-200BZXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250AJXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250AJXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250AXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250AXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BGC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BGI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BGXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BGXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BZC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BZI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BZXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-250BZXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C_06	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C_12	9-Mbit (256 K 횞 36/512 K 횞 18) Pipelined SRAM 文件：1.17908 Mbytes Page：37 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXC	9-Mbit (256 K 횞 36/512 K 횞 18) Pipelined SRAM 文件：1.17908 Mbytes Page：37 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXCT	封装/外壳：100-LQFP 包装：托盘托盘描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AJXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXC	封装/外壳：100-LQFP 包装：卷带（TR）描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXC	9-Mbit (256 K 횞 36/512 K 횞 18) Pipelined SRAM 文件：1.17908 Mbytes Page：37 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXC	Synchronous SRAM	Infineon 英飞凌	Infineon
CY7C1360C-166AXI	Synchronous SRAM	Infineon 英飞凌	Infineon
CY7C1360C-166AXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166AXI	9-Mbit (256 K 횞 36/512 K 횞 18) Pipelined SRAM 文件：1.17908 Mbytes Page：37 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGXC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BGXI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZC	9-Mbit (256 K 횞 36/512 K 횞 18) Pipelined SRAM 文件：1.17908 Mbytes Page：37 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZC	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360C-166BZI	9-Mbit (256K x 36/512K x 18) Pipelined SRAM 文件：521.48 Kbytes Page：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1360C产品属性

类型
描述
型号
CY7C1360C
功能描述
静态随机存取存储器 256Kx36 3.3V COM Sync PL 1CD 静态随机存取存储器
RoHS
否
制造商
Cypress Semiconductor
存储容量
16 Mbit
组织
1 M x 16
访问时间
55 ns
电源电压-最大
3.6 V
电源电压-最小
2.2 V
最大工作电流
22 uA
最大工作温度
+ 85 C
最小工作温度
- 40 C
安装风格
SMD/SMT
封装/箱体
TSOP-48
封装
Tray

CY7C1360C供应商更多...

更新时间：2025-10-23 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CY7C1360C-166AXCT	CYPRESS(赛普拉斯)	24+	LQFP-100	5591	百分百原装正品,可原型号开票	询价
深圳市凌旭科技有限公司	CY7C1360C-166AXC	CYPRESS	2016+	TQFP-100	8880	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市中赛美电子科技有限公司	CY7C1360C-166AXC	CYPRESS/赛普拉斯	21+	TQFP	7500	全新原装长期特价销售	询价
深圳市科芯源微电子有限公司	CY7C1360C-166AXC	CYPRESS/赛普拉斯	25+	QFP	996880	只做原装,欢迎来电资询	询价
深圳市威雅利发展有限公司	CY7C1360C-166AXC	CYPRESS	1231+	TQFP-100	171	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市润联芯城科技有限公司	CY7C1360C-200AXC	CYPRESS/赛普拉斯	23+	QFP	50000	只做原装正品	询价
讯运(深圳/上海)电子有限公司	CY7C1360C-200AXC	CYPRESS(赛普拉斯)	2021+	TQFP-100	499		询价
深圳市振宏微科技有限公司	CY7C1360C-200AXC	CYPRESS	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价
谛辉(北京/上海/青岛 )电子科技有限公司	CY7C1360C-166AXC	CY	25+	DIP-16	18000	原厂直接发货进口原装	询价
深圳市云美电子科技有限公司	CY7C1360C-200AJXC	CYPRESS/赛普拉斯	24+	TQFP-100	39900	只做原装进口现货	询价

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CY7C1360C芯片相关品牌

CY7C1360C规格书下载地址

CY7C1360C参数引脚图相关

CY7C1360C数据表相关新闻

CY7C1329H-133AXC

CY7C1399B-12ZC 十年IC，一家专业军工级IC供货商

CY7C1399B-12ZC十年IC，一家专业军工级IC供货商

CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯

CY7C1350G-133AXC公司原装现货/长期供应

CY7C1354C-166AXI公司原装现货/长期供应

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