CY7C1360价格

参考价格:¥118.1457

型号:CY7C1360A-150BGC 品牌:Cynergy 3 备注:这里有CY7C1360多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1360批发/采购报价,CY7C1360行情走势销售排行榜,CY7C1360报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1360

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousPipelinedBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)PipelinedSRAM

FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1360产品属性

  • 类型

    描述

  • 型号

    CY7C1360

  • 制造商

    Cypress Semiconductor

更新时间:2025-6-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
LQFP-100
5591
百分百原装正品,可原型号开票
CYPRESS/赛普拉斯
24+
TQFP
8000
全新原装现货
CY
20+
QFP
3242
英卓尔科技,进口原装现货!
CY
24+
TQFP100
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
CYPRESS
23+
NA
9808
进口代理原装优势供应全系列可订货QQ1304306553
CYPRESS/赛普拉斯
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
CYPRESS/赛普拉斯
21+
QFP
9852
只做原装正品假一赔十!正规渠道订货!
CYPRESS
24+
BGA120
23000
免费送样原盒原包现货一手渠道联系
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
CYPRESS
2023+
5800
进口原装,现货热卖

CY7C1360芯片相关品牌

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