位置：首页 > IC中文资料 > CY15B108QN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 |   | |
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | |
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
F-RAM (Ferroelectric RAM) | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
8Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN | Infineon 英飞凌 | | ||
封装/外壳：8-UQFN 包装：卷带（TR） 描述：IC FRAM 8MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 8MBIT SPI 40MHZ 8GQFN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - A | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
两年内 |
NA |
2145 |
实单价格可谈 |
|||
Cypress(赛普拉斯) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
9548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
CYPRESS |
19+ |
SOIC-8 |
42 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Cypress(赛普拉斯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Cypress(赛普拉斯) |
21+ |
SOIC-8 |
30000 |
只做原装,质量保证 |
|||
Cypress(赛普拉斯) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
Cypress(赛普拉斯) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
Infineon Technologies |
2年内批号 |
24-FBGA(6x8) |
4800 |
只供原装进口公司现货+可订货 |
|||
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
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DdatasheetPDF页码索引
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