位置：首页 > IC中文资料 > CY15B108QN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 |   | |
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | |
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
F-RAM (Ferroelectric RAM) | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
封装/外壳：8-UQFN 包装：卷带（TR） 描述：IC FRAM 8MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 8MBIT SPI 40MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - A | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
9548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
CYPRESS |
19+ |
SOIC-8 |
42 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon |
24+ |
FBGA-24 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
Cypress(赛普拉斯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
Cypress Semiconductor Corp |
25+ |
8-UQFN |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Infineon(英飞凌) |
25+ |
GQFN-8(3.2x3.3) |
11543 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon |
26+ |
8-SOIC |
60000 |
只有原装,可BOM表配单 |
|||
Cypress(赛普拉斯) |
21+ |
SOIC-8 |
30000 |
只做原装,质量保证 |
|||
Cypress(赛普拉斯) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
CY15B108QN规格书下载地址
CY15B108QN参数引脚图相关
- DC-AC
- d880
- d870
- d828
- d7805
- d7804
- d641
- d609
- d415
- d408
- d403
- d402
- d325
- d2007
- d2004
- d2002
- d126
- d1004
- d1002
- c波段
- CY20AS
- CY20APS
- CY20AP
- CY20A
- CY2081
- CY2077
- CY2071A
- CY2040
- CY2037
- CY1AM
- CY19BS
- CY19BPS
- CY19BP
- CY19B
- CY19AS
- CY19A
- CY16BS
- CY16BPS
- CY16BP
- CY16B
- CY15B116QN
- CY15B116QI-20BKXC
- CY15B116QI
- CY15B108QSN-108BKXI
- CY15B108QSN
- CY15B108QN-50BKXQT
- CY15B108QN-50BKXQ
- CY15B108QN-40SXIT
- CY15B108QN-40SXI
- CY15B108QN-40LPXIT
- CY15B108QN-40LPXI
- CY15B108QN-40BFXIT
- CY15B108QN-40BFXI
- CY15B108QN-20LPXIT
- CY15B108QN-20LPXI
- CY15B108QN-20LPXCT
- CY15B108QN-20LPXC
- CY15B108QN-20BFXIT
- CY15B108QN-20BFXI
- CY15B108QN_V01
- CY15B108QI-20LPXIT
- CY15B108QI-20LPXI
- CY15B108QI-20LPXCT
- CY15B108QI-20LPXC
- CY15B108QI-20BFXIT
- CY15B108QI-20BFXI
- CY15B108QI-20BFXAT
- CY15B108QI-20BFXA
- CY15B108QI_V01
- CY15B108QI
- CY15B104Q-SXIT
- CY15B104Q-SXI
- CY15B104QSN_V01
- CY15B104QSN
- CY15B104QN-50SXIT
- CY15B104QN-50SXI
- CY15B104QN-50SXAT
- CY15B104QN-50SXA
- CY15B104QN-50LPXIT
- CY15B104QN-50LPXI
- CY15AS
- CY15A
- CY14BS
- CY14BPS
- CY14BP
- CY14B
- CY14AS
- CY14APS
- CY14AP
- CY14ACS
- CY14AC
- CY14A
- CY132
- CY12BS
- CY12BPS
- CY12BP
- CY12B
- CY12AS
- CY12A
- CY123
CY15B108QN数据表相关新闻
CY15B102Q-SXM百分百原装，等你来
CY15B102Q-SXM百分百原装，等你来
2024-8-27CY22150FZXC 全新原装正品 现货
CY22150FZXC 全新原装正品 现货
2022-8-4CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY2071ASC-198 原装正品 贸泽微优势供应
CY2071ASC-198 原装正品 贸泽微优势供应
2020-11-3CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
