型号 功能描述 生产厂家 企业 LOGO 操作
CY15B108QSN

8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial

Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial

Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

封装/外壳:24-TBGA 包装:管件 描述:8MB EXCELON ULTRA FERROELECTRIC 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8Mb 3.0V Industrial 108MHz QSPI EXCELON™ F-RAM in 24-ball FBGA

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

8Mb 3.0V Industrial(Q) 108MHz QSPI EXCELON™ F-RAM in 24-ball FBGA

Infineon

英飞凌

8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3

Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high

Infineon

英飞凌

8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial

Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced

Infineon

英飞凌

8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial

Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi

Infineon

英飞凌

8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial

Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h

Infineon

英飞凌

更新时间:2026-1-4 9:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
Cypress Semiconductor Corp
24+
8-SOIC
56200
一级代理/放心采购
CYPRESS
23+
SOP8
50000
全新原装正品现货,支持订货
INFINEON
3
INFINEON
24+
n/a
25836
新到现货,只做原装进口
Cypress Semiconductor/赛普拉斯
两年内
NA
10996
实单价格可谈
CYPRESS/赛普拉斯
24+
NA/
3415
原装现货,当天可交货,原型号开票
CYPRESS/赛普拉斯
25+
SOP8
440
原装正品,假一罚十!
CYPRESS
25+23+
SOP8
32410
绝对原装正品全新进口深圳现货
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

CY15B108QSN数据表相关新闻