位置：首页 > IC中文资料 > CY15B108QI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B108QI | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 |   | |
CY15B108QI | 8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | |
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 20 MHz, automotive grade 3 Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 5-year data retention (see “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Advanced high | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, inrush current control, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (see “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
F-RAM (Ferroelectric RAM) | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 8MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-UQFN 包装：管件 描述：IC FRAM 8MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h | Infineon 英飞凌 | | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi | Infineon 英飞凌 | | ||
8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - A | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
2023+ |
SMD |
3367 |
原装现货热卖,安罗世纪电子只做原装 |
|||
CYPRESS(赛普拉斯) |
24+ |
UQFN8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON |
25+ |
原封装 |
51220 |
郑重承诺只做原装进口货 |
|||
Cypress Semiconductor/赛普拉斯 |
两年内 |
NA |
238 |
实单价格可谈 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Cypress(赛普拉斯) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
Cypress(赛普拉斯) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
CYPRESS |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Cypress(赛普拉斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
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2019-10-18
DdatasheetPDF页码索引
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