位置:CY15B108QSN > CY15B108QSN详情

CY15B108QSN中文资料

厂家型号

CY15B108QSN

文件大小

985.93Kbytes

页面数量

109

功能描述

8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INFINEON

CY15B108QSN数据手册规格书PDF详情

Features

• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K  8

- Virtually unlimited endurance of 100 trillion (1014) read/write cycles

- 151-year data retention (see “Data retention and endurance” on page 94)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Single and multi I/O serial peripheral interface (SPI)

- Serial bus interface SPI protocols

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers

- Supports SPI mode 0 (0, 0) for all DDR mode transfers

- Extended I/O SPI protocols

- Dual SPI (DPI) protocols

- Quad SPI (QPI) protocols

• SPI clock frequency

- Up to 108-MHz frequency SPI single data rate (SDR)

- Up to 46-MHz frequency SPI double data rate (DDR)

• eXecute-In-Place (XIP) for memory read/write

• Write protection, data security, and data integrity

• Hardware protection using the write protect (WP) pin

• Software block protection

• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity

- ECC detects and corrects 2-bit error. If a 3-bit error occurs, it does not correct but reports through the ECC

Status Register

- CRC detects any accidental change to raw data

• Extended electronic signatures

- Device ID includes manufacturer ID and product ID

- Unique ID

- User programmable serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Content can survive up to three standard reflow cycles

• Low-power consumption at high speed

- 12 mA (typ) active current for 108 MHz SPI SDR

- 20 mA (typ) active current for 108 MHz QSPI SDR

- 15.5 mA (typ) active current for 46 MHz QSPI DDR

- 105 μA (typ) standby current

- 0.9 μA (typ) deep power down mode current

- 0.1 μA (typ) hibernate mode current

Functional description

• Low-voltage operation

- CY15V108QSN: VDD = 1.71 V to 1.89 V

- CY15B108QSN: VDD = 1.8 V to 3.6 V

• Operating temperature: –40 °C to +85 °C

• Packages

- 24-ball fine pitch ball grid array (FBGA)

• Restriction of hazardous substances (RoHS) compliant

更新时间:2025-8-15 11:02:00
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