位置：首页 > IC中文资料 > CY15B102QN
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B102QN | 2Mb EXCELON??Auto Ferroelectric RAM (F-RAM) Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data retention and endurance) - Infineon no delay technology writes - Advanced high-reliability ferr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
CY15B102QN | 2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1 Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
CY15B102QN | Excelon??Auto 2-Mbit (256K 횞 8)Automotive-E Serial (SPI) F-RAM 文件：341.75 Kbytes Page：32 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  | |
2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1 Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1 Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1 Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC FRAM 2MBIT SPI 50MHZ 8SOIC 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
2-Mbit (128K 횞 16) Automotive F-RAM Memory 文件：504.12 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM 文件：1.44665 Mbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
24+ |
SOIC-8 |
4504 |
原厂直供,支持账期,免费供样,技术支持 |
|||
Cypress(赛普拉斯) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
CYPRESS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
CYPRESS/赛普拉斯 |
24+ |
SOIC-8 |
3980 |
原装正品 房间现货 |
|||
Cypress(赛普拉斯) |
2511 |
8-SOIC |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Cypress Semiconductor/赛普拉斯 |
两年内 |
NA |
555 |
实单价格可谈 |
|||
CYPRESS优势出 |
24+ |
SOIC-8 |
3000 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
CYPRESS/赛普拉斯 |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
23+ |
PG-USON-8 |
28611 |
为终端用户提供优质元器件 |
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