2Mb EXCELON??Auto Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data retention and endurance) - Infineon no delay technology writes - Advanced high-reliability ferr

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Excelon??Auto 2-Mbit (256K 횞 8)Automotive-E Serial (SPI) F-RAM

文件：341.75 Kbytes Page：32 Pages

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Adva

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

F-RAM（铁电RAM）

2Mb 3.3V 汽车级(E) 50MHz SPI EXCELON ™ F-RAM，8 引脚 SOIC 封装

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC FRAM 2MBIT SPI 50MHZ 8SOIC 集成电路（IC） 存储器

F-RAM（铁电RAM）

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

2-Mbit (128K 횞 16) Automotive F-RAM Memory

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2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件：1.44665 Mbytes Page：22 Pages