型号 功能描述 生产厂家 企业 LOGO 操作
CY15B102Q

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON??Auto Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data retention and endurance) - Infineon no delay technology writes - Advanced high-reliability ferr

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Adva

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2 Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 256K × 8, 108 MHz, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 96) - Infineon instant non-volatile write technology - Ad

Infineon

英飞凌

2 Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 256K × 8, 108 MHz, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 96) - Infineon instant non-volatile write technology - Ad

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

Excelon??Auto 2-Mbit (256K 횞 8)Automotive-E Serial (SPI) F-RAM

文件:341.75 Kbytes Page:32 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

F-RAM(铁电RAM)

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC FRAM 2MBIT SPI 25MHZ 8SOIC 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC FRAM 2MBIT SPI 25MHZ 8SOIC 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K 횞 16) Automotive F-RAM Memory

文件:504.12 Kbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

更新时间:2025-12-30 16:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon
24+
SOIC-8
5000
原厂原装,价格优势,欢迎洽谈!
CONEXANT
24+
QFP
9480
公司现货库存,支持实单
Cypress(赛普拉斯)
24+
8-SOIC
8632
原厂可订货,技术支持,直接渠道。可签保供合同
CYPRESS优势出
24+
SOIC-8
3000
市场最低 原装现货 假一罚百 可开原型号
Cypress(赛普拉斯)
2511
8-SOIC
8484
电子元器件采购降本30%!原厂直采,砍掉中间差价
CYPRESS/赛普拉斯
25+
EIAJ-8
15000
全新原装现货,假一赔十
Infineon
26+
8-SOIC
60000
只有原装,可BOM表配单
CYPRESS
24+
SOIC-8
8000
新到现货,只做全新原装正品
Cypress(赛普拉斯)
25+
8-SOIC
500000
源自原厂成本,高价回收工厂呆滞
SPANSION(飞索)
2447
SOIC-8
315000
188个/管一级代理专营品牌!原装正品,优势现货,长期

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