型号 功能描述 生产厂家 企业 LOGO 操作
CY15B102Q

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM) WEL enabled, Serial (SPI), 256K × 8, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 23) - Infineon instant non-volatile write technology - A

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON??Auto Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data retention and endurance) - Infineon no delay technology writes - Advanced high-reliability ferr

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Adva

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

Infineon

英飞凌

2 Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 256K × 8, 108 MHz, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 96) - Infineon instant non-volatile write technology - Ad

Infineon

英飞凌

2 Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 256K × 8, 108 MHz, industrial

Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 96) - Infineon instant non-volatile write technology - Ad

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

Excelon??Auto 2-Mbit (256K 횞 8)Automotive-E Serial (SPI) F-RAM

文件:341.75 Kbytes Page:32 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

F-RAM(铁电RAM)

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC FRAM 2MBIT SPI 25MHZ 8SOIC 集成电路(IC) 存储器

ETC

知名厂家

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (256 K 횞 8) Serial (SPI) Automotive F-RAM

文件:1.44665 Mbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:8-SOIC(0.209",5.30mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC FRAM 2MBIT SPI 25MHZ 8SOIC 集成电路(IC) 存储器

ETC

知名厂家

2-Mbit (128K 횞 16) Automotive F-RAM Memory

文件:504.12 Kbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

更新时间:2025-9-30 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
24+
SOIC-8
4504
原厂直供,支持账期,免费供样,技术支持
INFINEON
23+
K-W
470
只有原装,请来电咨询
CYPRESS
20+
EIAJ-8
11520
特价全新原装公司现货
CypressS
25+
SOP8
2700
原装正品,假一罚十!
CYPRESS/RAMTRON
20+
SOP-8
3
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS/赛普拉斯
20+
EIAJ-8
20000
Cypress(赛普拉斯)
24+
8-SOIC
8632
原厂可订货,技术支持,直接渠道。可签保供合同
CYPRESS
25+23+
SOP8
32412
绝对原装正品全新进口深圳现货
Cypress(赛普拉斯)
21+
SOIC-8
30000
只做原装,质量保证
Cypress(赛普拉斯)
23+
标准封装
6000
正规渠道,只有原装!

CY15B102Q数据表相关新闻