2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC FRAM 2MBIT SPI 50MHZ 8SOIC 集成电路（IC） 存储器

2Mb 3.3V 汽车级(E) 50MHz SPI EXCELON ™ F-RAM，8 引脚 SOIC 封装

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Adva