Features

• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8

- Virtually unlimited endurance of 1000 trillion (1015) read/write cycles

- 151-year data retention (See “Data retention and endurance” on page 25)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast SPI

- Up to 50 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the write protect (WP) pin

- Software protection using write disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Device ID contains manufacturer ID and product ID

- Unique ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 2.4 mA (typ) active current at 40 MHz

- 2.3 µA (typ) standby current

- 0.70 µA (typ) deep power down mode current

- 0.1 µA (typ) hibernate mode current

• Low-voltage operation

- CY15V102QN: VDD = 1.71 V to 1.89 V

- CY15B102QN: VDD = 1.8 V to 3.6 V

• Industrial operating temperature: –40°C to +85°C

• Packages

- 8-pin small outline integrated circuit (SOIC) package

- 8-pin thin dual flat no leads (DFN) package

- 8-pin plastic dual in-line (PDIP) package

• Restriction of hazardous substances (RoHS) compliant