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CY14B104N价格

参考价格：￥142.8307

型号：CY14B104NA-BA25XI 品牌：Cynergy 3 备注：这里有CY14B104N多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B104N批发/采购报价，CY14B104N行情走势销售排行榜，CY14B104N报价。

型号	功能描述	生产厂家企业	LOGO
CY14B104N	4-Mbit (512K x 8/256K x 16) nvSRAM 文件：415.19 Kbytes Page：21 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104N	4-Mbit (512K x 8/256K x 16) nvSRAM 文件：664.19 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104N	4 Mbit (512K x 8/256K x 16) nvSRAM 文件：797.79 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25I	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25I	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25IT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-BA45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZS45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA-ZSP45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY14B104NA	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY14B104N产品属性

类型
描述
型号
CY14B104N
制造商
CYPRESS
制造商全称
Cypress Semiconductor
功能描述
4 Mbit(512K x 8/256K x 16) nvSRAM

CY14B104N供应商更多...

更新时间：2025-12-30 11:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CY14B104NA-ZS45XET	CYPRESS(赛普拉斯)	24+	TSOPII-44	5768	百分百原装正品,可原型号开票	询价
深圳市坤融电子科技有限公司	CY14B104NA-BA45XI	CYPRESS/赛普拉斯	2025+	BGA48	5000	原装进口价格优请找坤融电子!	询价
深圳市纳艾斯科技有限公司	CY14B104NA-ZSP45XI	CYPRESS	24+		8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市冠亿通科技有限公司	CY14B104NA-ZSP45XI	Cypress(赛普拉斯)	25+		5000	只做原装假一罚百可开票可售样	询价
深圳市芯皇电子有限公司	CY14B104N-BA25XC	CYPRESS/赛普拉斯	QFN	23+	6000	专业配单原装正品假一罚十	询价
深圳市卓越微芯电子有限公司	CY14B104NA-ZS45XI	原装CYPRE	25+	TSOP-44P	9880	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市明嘉莱科技有限公司	CY14B104NA-ZS45X	CYPRESS/赛普拉斯	25+	TSOP44	157616	明嘉莱只做原装正品现货	询价
深圳市高捷芯城科技有限公司	CY14B104NA-ZSP25XI	CYPRESS(赛普拉斯)	24+	TSOP-54	17459	正规渠道,大量现货,只等你来。	询价
深圳市中飞凌科技有限公司	CY14B104NA-BA45XI	Infineon	26+	48-TFBGA	60000	只有原装,可BOM表配单	询价
深圳市富达微科技有限公司	CY14B104NA-BA45XI	Infineon	24+	48-TFBGA	30000	原厂原装，价格优势，欢迎洽谈！	询价

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CY14B104N价格

CY14B104N产品属性

CY14B104N供应商更多...

CY14B104N芯片相关品牌

CY14B104N规格书下载地址

CY14B104N参数引脚图相关

CY14B104N数据表相关新闻

CY15B102Q-SXM百分百原装，等你来

CXB3590-0000-000N0YAD32Q

CY15B108QN-40LPXI

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引