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CY14B104NA-ZSP25XC中文资料

厂家型号

CY14B104NA-ZSP25XC

文件大小

863.54Kbytes

页面数量

23

功能描述

4 Mbit (512K x 8/256K x 16) nvSRAM

4 Mbit(512K x 8/256K x 16) nvSRAM

数据手册

下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

CY14B104NA-ZSP25XC数据手册规格书PDF详情

Functional Description

The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Features

■ 20 ns, 25 ns, and 45 ns Access Times

■ Internally Organized as 512K x 8 (CY14B104LA) or 256K x 16 (CY14B104NA)

■ Hands Off Automatic STORE on Power Down with only a Small Capacitor

■ STORE to QuantumTrap Nonvolatile Elements Initiated by Software, Device Pin, or AutoStore on Power Down

■ RECALL to SRAM Initiated by Software or Power Up

■ Infinite Read, Write, and Recall Cycles

■ 200,000 STORE Cycles to QuantumTrap

■ 20 year Data Retention

■ Single 3V +20, -10 Operation

■ Commercial and Industrial Temperatures

■ 48-Ball FBGA and 44/54-Pin TSOP-II Packages

■ Pb-free and RoHS Compliance

CY14B104NA-ZSP25XC产品属性

  • 类型

    描述

  • 型号

    CY14B104NA-ZSP25XC

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    4 Mbit(512K x 8/256K x 16) nvSRAM

更新时间:2025-10-22 15:51:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Cypress
22+
54TSOP II
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40
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CYPRESS
2025+
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3577
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CYPRESS
24+
N/A
8000
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25+
电联咨询
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25+
25000
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24+
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