4 Mbit (512K x 8/256K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

4-Mbit (512 K x 8/256 K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

封装/外壳：54-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC NVSRAM 4MBIT PAR 54TSOP II 集成电路（IC） 存储器

nvsRAM（非易失性 SRAM）

4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times

文件：961.93 Kbytes Page：25 Pages

4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM

文件：991.18 Kbytes Page：24 Pages

4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM

文件：977.41 Kbytes Page：26 Pages

4 Mbit (512K x 8/256K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

4 Mbit (512K x 8/256K x 16) nvSRAM

Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo

4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM

文件：991.18 Kbytes Page：24 Pages

4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times

文件：961.93 Kbytes Page：25 Pages