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CY14B104NA价格

参考价格：￥142.8307

型号：CY14B104NA-BA25XI 品牌：Cynergy 3 备注：这里有CY14B104NA多少钱，2026年最近7天走势，今日出价，今日竞价，CY14B104NA批发/采购报价，CY14B104NA行情走势销售排行榜，CY14B104NA报价。

型号	功能描述	生产厂家企业	LOGO
CY14B104NA	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA	4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times 文件：961.93 Kbytes Page：25 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25I	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25I	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25IT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZS45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP20XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP20XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP20XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP20XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP25XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XC	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XCT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XI	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XI	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XIT	4 Mbit (512K x 8/256K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-ZSP45XIT	4-Mbit (512 K x 8/256 K x 16) nvSRAM Functional Description The Cypress CY14B104LA/CY14B104NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wo	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：977.41 Kbytes Page：26 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY14B104NA-BA20XI	4-Mbit (512 K 횞 8/256 K 횞 16) nvSRAM 文件：991.18 Kbytes Page：24 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY14B104NA产品属性

类型
描述
密度 (Kb)：
4096
频率 (MHz)：
无
接口：
Parallel
最高工作温度 (°C)：
85
Max. Operating VCCQ (V)：
3.60
最高工作电压 (V)：
3.60
最低工作温度 (°C)：
-40
Min. Operating VCCQ (V)：
2.70
最低工作电压 (V)：
2.70
组织 (X x Y)：
256Kb x 16
Part Family：
并行 nvSRAM
速率 (ns)：
20
Tape & Reel：
否
温度分类：
工业

CY14B104NA供应商更多...

更新时间：2026-5-13 22:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	CY14B104NA-ZSP45XI	CYPRESS	24+		8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
中天科工半导体（深圳）有限公司	CY14B104NA-ZS45XIT	CYPRESS/赛普拉斯	25+	TSOP44	32360	CYPRESS/赛普拉斯全新特价CY14B104NA-ZS45XIT即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	CY14B104NA-BA20XI	Cypress	14+	BGA	28	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市富达微科技有限公司	CY14B104NA-BA45XI	Infineon	24+	48-TFBGA	30000	原厂原装,价格优势,欢迎洽谈!	询价
深圳市诺美思科技有限公司	CY14B104NA-BA20XI	CYPRESS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市正纳电子有限公司	CY14B104NA-BA20XI	Cypress(赛普拉斯)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市拓亿芯电子有限公司	CY14B104NA-BA20XI	CYPRESS	25+	BGA	30000	代理全新原装现货,价格优势	询价
深圳市斌腾达科技有限公司	CY14B104NA-BA25I	Cypress Semiconductor Corp	21+	165-TBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市凌旭科技有限公司	CY14B104NA-ZS45XIT	CYPRESS	21+	TSOP44	2000	十年信誉,只做原装,有挂就有现货!	询价
深圳市冠亿通科技有限公司	CY14B104NA-ZS45XI	Infineon Technologies	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价

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產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
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2019-10-18

DdatasheetPDF页码索引

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找IC，尽在114IC

CY14B104NA价格

CY14B104NA产品属性

CY14B104NA供应商更多...

CY14B104NA芯片相关品牌

CY14B104NA规格书下载地址

CY14B104NA参数引脚图相关

CY14B104NA数据表相关新闻

CY15B102Q-SXM百分百原装，等你来

CXB3590-0000-000N0YAD32Q

CY15B108QN-40LPXI

CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CXD2163BR

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引