HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

VDSS = 500 V ID25 = 55 A RDS(on)= 90 mΩ trr ≤ 250 ns Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● RF capable Mosfets ● Low gate charge and capacitances - easier to drive -faste

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable Mosfets • Rugged polysilicon gate cell structure • Double metal process for low gate resistance • Unclamped