位置：首页 > IC中文资料 > CSD88537NDR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 |   | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs 文件：1.0064 Mbytes Page：13 Pages | TI 德州仪器 | | ||
CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs 文件：1.0064 Mbytes Page：13 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI/德州仪器 |
2022+ |
SOIC-8_150mil |
7600 |
原厂原装,假一罚十 |
|||
TI/德州仪器 |
2025+ |
SON22 |
5000 |
原装进口价格优 请找坤融电子! |
|||
TI |
25+ |
SOIC-8 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI/德州仪器 |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI/德州仪器 |
2224+ |
SOP8 |
22000 |
A3-7货柜原装正品支持实单 |
|||
Texas Instruments |
25+ |
SOIC8 |
18000 |
TI优势渠道,大量原装库存现货,交期快,欢迎询价。 |
|||
TI |
24+ |
SOP8 |
10000 |
低于市场价,实单必成,QQ1562321770 |
|||
TI/德州仪器 |
24+ |
65200 |
|||||
TI/德州仪器 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
CSD88537NDR规格书下载地址
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DdatasheetPDF页码索引
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