CSD88537ND价格
参考价格：￥4.2539
型号：CSD88537ND 品牌：TI 备注：这里有CSD88537ND多少钱，2026年最近7天走势，今日出价，今日竞价，CSD88537ND批发/采购报价，CSD88537ND行情走势销售排行榜，CSD88537ND报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD88537ND | 丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 |   | |
CSD88537ND | 丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | |
CSD88537ND | 采用 SO-8 封装的双路、15mΩ、60V、N 沟道 NexFET™ 功率 MOSFET 这款双路小外形尺寸 (SO)-8，60V，12.5mΩ NexFET 功率 MOSFET 旨在用作低电流电机控制应用中的半桥。 顶视图要了解所有可用封装，请见数据表末尾的可订购产品附录。 RθJA = 60°C/W，这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸2，2 盎司 的铜焊盘上测得的典型值。最大 RθJL = 20°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1% • 超低 Qg 和 Qgd\n• 雪崩额定值\n• 无铅 \n• 符合 RoHS 环保标准\n• 无卤素; | TI 德州仪器 | | |
CSD88537ND | CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs 文件：1.0064 Mbytes Page：13 Pages | TI 德州仪器 | | |
CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
丝印代码：88537N；CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c | TI 德州仪器 | | ||
CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs 文件：1.0064 Mbytes Page：13 Pages | TI 德州仪器 | |
CSD88537ND产品属性
- 类型
描述
- Configuration：
Dual
- Rds(on) max at VGS=10 V (mOhms)：
15
- IDM - pulsed drain current (Max) (A)：
62
- QG typ (nC)：
14
- QGD typ (nC)：
2.3
- Package (mm)：
SO-8
- VGS (V)：
20
- VGSTH typ (V)：
3
- ID - silicon limited at Tc=25degC (A)：
16
- ID - package limited (A)：
15
- Logic level：
No
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
26+ |
SOIC-8 |
10548 |
原厂订货渠道,支持账期,一站式服务! |
|||
TI |
25+ |
SOIC-8 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI |
2016+ |
SOIC8 |
2500 |
主营TI,绝对原装,假一赔十,可开17%增值税发票! |
|||
TI/德州仪器 |
2224+ |
SOP8 |
22000 |
A3-7货柜原装正品支持实单 |
|||
TI |
21+ |
8080 |
只做原装,质量保证 |
||||
TI |
22+ |
NA |
6520 |
原盘原标 公司现货/支持实单 |
|||
TI/德州仪器 |
23+ |
SOIC8 |
18204 |
原装正品代理渠道价格优势 |
|||
TI |
26+ |
BGA |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
TI/德州仪器 |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI |
18+ |
SOP8 |
85600 |
保证进口原装可开17%增值税发票 |
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CSD88537ND规格书下载地址
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DdatasheetPDF页码索引
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