型号 功能描述 生产厂家 企业 LOGO 操作
CSD87313DMST.B

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

TI

德州仪器

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

TI

德州仪器

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

TI

德州仪器

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic

TI

德州仪器

30-V Dual N-Channel NexFET Power MOSFETs

文件:1.15078 Mbytes Page:16 Pages

TI

德州仪器

30-V Dual N-Channel NexFET Power MOSFETs

文件:1.15078 Mbytes Page:16 Pages

TI

德州仪器

更新时间:2026-1-2 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
TI/德州仪器
21+
SON8
50000
百域芯优势 实单必成 可开13点增值税
23+
NA
6000
专做原装正品,假一罚百!
TI
21+
8080
只做原装,质量保证
TI/德州仪器
23+
LSON8
18204
原装正品代理渠道价格优势
TI
23+
SON8
5000
原装正品,假一罚十
TI/德州仪器
24+
LSON-CLIP-8
9600
原装现货,优势供应,支持实单!
TI
1706+
LSON8
9100
只做原装进口,假一罚十
TI
三年内
1983
只做原装正品
TI
16+
LSON-CLIP
10000
原装正品

CSD87313DMST.B数据表相关新闻