位置：首页 > IC中文资料 > CSD87313DMS.B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD87313DMS.B | CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 |   | |
CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 | | ||
CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 | | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes Page：16 Pages | TI 德州仪器 | | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes Page：16 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
8-WDFN |
4157 |
原装正品代理渠道价格优势 |
|||
TI/德州仪器 |
1349+ |
QFN |
8 |
原装正品现货,可开发票,假一赔十 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Texas Instruments(德州仪器) |
24+ |
SSOP-28 |
690000 |
代理渠道/支持实单/只做原装 |
|||
TI |
16+ |
LSON-CLIP |
10000 |
原装正品 |
|||
TI |
20+ |
SON8 |
53650 |
TI原装主营-可开原型号增税票 |
|||
TI |
24+ |
SON8 |
36520 |
原装现货/放心购买 |
|||
TI/德州仪器 |
21+ |
SON8 |
50000 |
百域芯优势 实单必成 可开13点增值税 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
23+ |
QFN |
7000 |
CSD87313DMS.B规格书下载地址
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DdatasheetPDF页码索引
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