| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD87313DMS.B | 丝印代码：CSD87313；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 |   | |
CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 | | ||
丝印代码：CSD87313；CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs 1 Features 1• Low-Source-to-Source On Resistance • Dual Common Drain N-Channel MOSFETs • Optimized for 5-V Gate Drive • Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applic | TI 德州仪器 | | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes Page：16 Pages | TI 德州仪器 | | ||
30-V Dual N-Channel NexFET Power MOSFETs 文件：1.15078 Mbytes Page：16 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
20+ |
SON8 |
53650 |
TI原装主营-可开原型号增税票 |
|||
TI |
22+ |
8WSON (3.3x3.3) |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
25+ |
LSON8 |
12500 |
全新原装现货,假一赔十 |
|||
TI/德州仪器 |
2450+ |
WSON-CLIP(DMS)8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
23+ |
NA |
6000 |
专做原装正品,假一罚百! |
||||
TI |
2016+ |
QFN |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TI/德州仪器 |
21+ |
SON8 |
50000 |
百域芯优势 实单必成 可开13点增值税 |
|||
TI |
24+ |
LSON8 |
30000 |
TI一级代理商专营进口原装现货假一赔十 |
|||
TI/德州仪器 |
25+ |
QFN |
12250 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
TI/德州仪器 |
24+ |
NA |
10000 |
原装柜台现货特价热卖 |
CSD87313DMS.B芯片相关品牌
CSD87313DMS.B规格书下载地址
CSD87313DMS.B参数引脚图相关
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