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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD83325LT.B | CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET 1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N | TI 德州仪器 |   | |
CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET 1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N | TI 德州仪器 | | ||
CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET 1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N | TI 德州仪器 | | ||
12 V Dual N-Channel NexFET Power MOSFET 文件：1.18336 Mbytes Page：14 Pages | TI 德州仪器 | | ||
12 V Dual N-Channel NexFET??Power MOSFET 文件：639.66 Kbytes Page：11 Pages | TI 德州仪器 | | ||
Conductor Punch 文件：23.25 Kbytes Page：1 Pages | MOLEX11 莫仕 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
WSON6 |
50000 |
全新原装正品现货,支持订货 |
|||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI/德州仪器 |
2023+ |
WSON6 |
60000 |
十五年行业诚信经营,专注全新正品 |
|||
TI/德州仪器 |
21+ |
WSON6 |
6000 |
全新原装 公司现货 |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI/德州仪器 |
24+ |
WSON6 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI |
23+ |
SMD |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
TI |
16+ |
WSON |
10000 |
原装正品 |
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CSD83325LT.B规格书下载地址
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DdatasheetPDF页码索引
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