位置：CSD83325L.B > CSD83325L.B详情
CSD83325L.B中文资料
CSD83325L.B数据手册规格书PDF详情
1 Features
• Common drain configuration
• Low-on resistance
• Small footprint of 2.2 mm × 1.15 mm
• Lead free
• RoHS compliant
• Halogen free
• Gate ESD protection
2 Applications
• Battery management
• Battery protection
3 Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small footprint and common drain configuration make
the device ideal for battery pack applications in small
handheld devices.
更新时间：2025-10-17 11:10:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
54814 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
TI/德州仪器 |
24+ |
NA/ |
36000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TI/德州仪器 |
23+ |
BGA6 |
50000 |
全新原装正品现货,支持订货 |
|||
TI/德州仪器 |
24+ |
BGA6 |
60000 |
全新原装现货 |
|||
TI/德州仪器 |
24+ |
BGA6 |
47186 |
郑重承诺只做原装进口现货 |
|||
TI/德州仪器 |
24+ |
BGA6 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
TexasInstruments |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
TI/德州仪器 |
23+ |
6-XFBGA |
3613 |
原装正品代理渠道价格优势 |
|||
TI |
25+ |
6-LGA |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
TI(德州仪器) |
2021+ |
BGA-6 |
499 |
CSD83325L.B 资料下载更多...
CSD83325L.B 芯片相关型号
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
