Conductor Punch

文件：23.25 Kbytes Page：1 Pages

丝印代码：83325L；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

丝印代码：83325L；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

丝印代码：83325L；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

丝印代码：83325L；CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET

1 Features • Common drain configuration • Low-on resistance • Small footprint of 2.2 mm × 1.15 mm • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual N

NANO-D SINGLE ROW CONNECTOR FEMALE, SIZE XX, NMLXX-1S02-30F6-18.0 SO1

文件：55.91 Kbytes Page：1 Pages

NANO-D SINGLE ROW CONNECTOR FEMALE, SIZE XX, NMLXX-1S07-30F6-18.0 SO1

文件：52.98 Kbytes Page：1 Pages

12 V Dual N-Channel NexFET Power MOSFET

文件：1.18336 Mbytes Page：14 Pages

12 V Dual N-Channel NexFET??Power MOSFET

文件：639.66 Kbytes Page：11 Pages

12 V Dual N-Channel NexFET Power MOSFET

文件：1.18336 Mbytes Page：14 Pages