位置：首页 > IC中文资料 > CSD18542KTTT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD18542KTTT | CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 |   | |
CSD18542KTTT | 60-V N-Channel NexFET Power MOSFET 文件：524.87 Kbytes Page：13 Pages | TI 德州仪器 | | |
CSD18542KTTT | 60-V N-Channel NexFET Power MOSFET 文件：524.87 Kbytes Page：13 Pages | TI 德州仪器 | | |
CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 | | ||
CSD18542KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th | TI 德州仪器 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
CSD18542KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th | TI 德州仪器 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
60V N-Channel NexFET Power MOSFET 文件：468.71 Kbytes Page：11 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
2021+ |
TO-263-3 |
499 |
||||
TI |
16+ |
TO-263 |
10000 |
原装正品 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI |
22+ |
TO2634 D2Pak (3 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
TI |
25+ |
DDPAK/TO-263 (KTT) |
6000 |
原厂原装,价格优势 |
|||
N/A |
99 |
||||||
TI/德州仪器 |
26+ |
TO-263-3 |
8880 |
原装认准芯泽盛世！ |
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2020-12-22CSD18535KTTTI原厂原装全系列可订货
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2020-10-1
DdatasheetPDF页码索引
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