位置：首页 > IC中文资料 > CSD18542KTT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD18542KTT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 |   | |
CSD18542KTT | CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 | | |
CSD18542KTT | 采用 D2PAK 封装的单路、4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET | TI 德州仪器 | | |
CSD18542KTT | 60-V N-Channel NexFET Power MOSFET 文件：524.87 Kbytes Page：13 Pages | TI 德州仪器 | | |
CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 | | ||
CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 | | ||
CSD18542KTT 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low-thermal resistance • Avalanche rated • Logic level • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • DC-DC ,conversion • Secondary side synchronous rectifier • Motor control 3 Description | TI 德州仪器 | | ||
60-V N-Channel NexFET Power MOSFET 文件：524.87 Kbytes Page：13 Pages | TI 德州仪器 | | ||
60-V N-Channel NexFET Power MOSFET 文件：524.87 Kbytes Page：13 Pages | TI 德州仪器 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
CSD18542KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th | TI 德州仪器 | | ||
CSD18542KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th | TI 德州仪器 | | ||
60V N-Channel NexFET Power MOSFET 文件：468.71 Kbytes Page：11 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
21+ |
8080 |
只做原装,质量保证 |
||||
TI/德州仪器 |
2023+ |
TO263 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
FAIRCHILD/仙童 |
23+ |
DIP-8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
TI |
24+ |
TO-263-3 |
2815 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
TI(德州仪器) |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
TI/德州仪器 |
24+ |
TO-263-3 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
CSD18542KTT规格书下载地址
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2020-10-1
DdatasheetPDF页码索引
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