2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

封装/外壳：780019 包装：带 描述：IC RF AMP 20MHZ-6GHZ 780019 RF/IF，射频/中频和 RFID 射频放大器

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

2 W, DC - 6.0 GHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

包装：盒 描述：0.02-6.0GHZ, AMP W/ CMPA0060002F 开发板，套件，编程器 射频评估和开发套件，开发板

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif