Description

Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN

HEMTs also offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design

approach, enabling extremely wide bandwidths to be achieved in a small footprint.

Features

• 17 dB Small Signal Gain

• 2 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.169 x 0.066 x 0.004 inches

Applications

• Ultra Broadband Amplifiers

• Fiber Drivers

• Test Instrumentation

• EMC Amplifier Drivers