Description

Wolfspeed’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC employs a

distributed (traveling-wave) amplifier design approach, enabling extremely

wide bandwidths to be achieved in a small footprint screw-down package

featuring a copper-tungsten heat sink.

Features

• 18 dB Small Signal Gain

• 4.8 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• 0.5” x 0.5” Total Product Size

Applications

• Ultra Broadband Amplifiers

• Fiber Drivers

• Test Instrumentation

• EMC Amplifier Drivers