2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

文件：417.49 Kbytes Page：7 Pages

2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

ÖLFLEX® HEAT 180 SiF

Application range Areas with high ambient temperatures where conventional core insulation materials will embrittle after a short while Typical fields of application - Control cabinet manufacturing - Appliances and apparatus engineering - Electric motor industry - Sauna/solarium construction