2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

包装：散装 描述：CMPA0060002F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

文件：417.49 Kbytes Page：7 Pages

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

ÖLFLEX® HEAT 180 SiF

Application range Areas with high ambient temperatures where conventional core insulation materials will embrittle after a short while Typical fields of application - Control cabinet manufacturing - Appliances and apparatus engineering - Electric motor industry - Sauna/solarium construction