2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher therm ·17 dB Small Signal Gain\n·3 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

包装：散装 描述：CMPA0060002F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages

2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

文件：961.69 Kbytes Page：9 Pages