DC-40 GHz 2-bit Digital Attenuator

Key Features • Ultra Wideband Performance • Low Insertion Loss • Wide Attenuation Range • Small Die Size: 850 um x 1350 um

DC-40 GHz 2-bit Digital Attenuator

文件：307.14 Kbytes Page：10 Pages

DC-40 GHz (L, S, C, X, Ku, K, Ka Band) 2-bit Digital Attenuator

DC-22 GHz 2-bit Digital Attenuator

Key Features • Wideband Performance • Low Insertion Loss • 12 dB Attenuation Range • Pb-Free RoHs Compliant 3x3 QFN Package

封装/外壳：2-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LED GREEN CLEAR SMD 光电器件 LED 指示 - 分立

封装/外壳：2-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LED RED CLEAR SMD 光电器件 LED 指示 - 分立

发光二极管/LED

DC-22 GHz (L, S, C, X, Ku, K Band) 2-bit Digital Attenuator

DC-22 GHz 2-bit Digital Attenuator

文件：327.95 Kbytes Page：10 Pages

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

文件：32.36 Kbytes Page：1 Pages