Dual IGBTMOD 800 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-element in a Pack ● AISiC Baseplate

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-elements in a pack (for brake) ● AISiC base plate APPLICATION DC choppers, Dynamic

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 800 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD 800 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC ch

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC ch

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ●IC...................................................................800A ●VCES .......................................................3300V ●Insulated Type ●1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induct

HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 2500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Conve

HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 2500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Conve

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heatin

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heatin

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

Dual IGBTMOD 800 Amperes/600 Volts

Power Modules-IGBT Modules T series CM800DW-34T

Power Modules-IGBT Modules T series CM800DW-34TA

HIGH POWER SWITCHING USE INSULATED TYPE

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Powerex Dual IGBTMOD Modules are designed for use in switching applications.

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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