T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base T-3 1/4 Miniature Screw Base

Bayonet Base, Screw Base

T-3 1/4 Miniature Bayonet Base T-3 1/4 Miniature Screw Base

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base

VIBRATION SWITCH

文件：174.61 Kbytes Page：1 Pages

VIBRATION SWITCH

文件：373.9 Kbytes Page：1 Pages

倾角开关

Power Modules-IGBT Modules S series CM1800DY-34S

Dual Half-Bridge IGBTMOD??HVIGBT Series Module 1800 Amperes/1700 Volts

文件：866.36 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE INSULATED TYPE

文件：67.94 Kbytes Page：6 Pages

Power Modules-HVIGBT Modules/HVIPM H series CM1800HC-34H

HIGH POWER SWITCHING USE INSULATED TYPE

文件：67.94 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

文件：70.85 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

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Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts

文件：560.94 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

文件：62.94 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

文件：98.12 Kbytes Page：7 Pages

Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts

文件：503.28 Kbytes Page：4 Pages

16-Bit, Stereo, Audio ANALOG-TO-DIGITAL CONVERTER

文件：101.11 Kbytes Page：13 Pages

Miniature Bayonet Base

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Miniature Bayonet Base

文件：52.4 Kbytes Page：1 Pages

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und