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CM10晶体管资料
CM10005别名:CM10005三极管、CM10005晶体管、CM10005晶体三极管
CM10005生产厂家:美国史普拉各电气公司
CM10005制作材料:Si-N+Darl
CM10005性质:功率放大 (L)
CM10005封装形式:直插封装
CM10005极限工作电压:400V
CM10005最大电流允许值:20A
CM10005最大工作频率:<1MHZ或未知
CM10005引脚数:2
CM10005最大耗散功率:
CM10005放大倍数:β=400
CM10005图片代号:E-44
CM10005vtest:400
CM10005htest:999900
- CM10005atest:20
CM10005wtest:0
CM10005代换 CM10005用什么型号代替:
CM10价格
参考价格:¥1215.7076
型号:CM100 品牌:Amprobe 备注:这里有CM10多少钱,2025年最近7天走势,今日出价,今日竞价,CM10批发/采购报价,CM10行情走势销售排行榜,CM10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CM10 | One-Touch Locking Style Small Sized Circular Connectors ◆ OUTLINE CM10 series (D6) type is a small sized waterproof circular connector with push on locking and turnoff unlocking mechanism. The plug will be easily locked with the receptacle when you push on. Rotating the coupling ring, the plug will be unlocked when you need to unmate. | DDK | ||
CM10 | G-3 1/2 Miniature 2 Pin Base WHERE INNOVATION COMES TO LIGHT | CML | ||
CM10 | Molded Mini-DYAD Description Clares Molded Mini DYAD dry reed switches are ideally suited for small switching signal applications. This switch has sputtered tuthenium contacts and an extraordinary seal strength, achieved by a patented laser sealing of the glass. In a low level or dry switching environments, both | Clare Clare, Inc. | ||
CM10 | SMT Chip Inductors 文件:419.78 Kbytes Page:7 Pages | Bourns 伯恩斯 | ||
CM10 | Base 文件:32.59 Kbytes Page:1 Pages | VCC | ||
CM10 | SMT Chip Inductors 文件:449.64 Kbytes Page:9 Pages | Bourns 伯恩斯 | ||
CM10 | 包装:袋 描述:FPE04-6U NO FRONT PANEL 盒子,外壳,机架 卡机架配件 | VECTOR | ||
CM10 | 包装:袋 描述:FPE04-6U NO FRONT PANEL 盒子,外壳,机架 卡机架配件 | VECTOR | ||
CM10 | Chip Fuses | ETC 知名厂家 | ETC | |
G-3 1/2 Miniature 2 Pin Base WHERE INNOVATION COMES TO LIGHT | CML | |||
Tilt Switch FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Hermetically Sealed & Inert Gas Filled • Customization Available | COMUS | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
RP-11 Single Contact Bayonet Base RP-11 Single Contact Bayonet Base | CML | |||
Contact Bayonet Base RP-11 Single Contact Bayonet Base RP-11 Double Contact Bayonet Base | VCC | |||
Tilt Switch FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Customization Available | COMUS | |||
HIGH POWER SWITCHING USE ● IC ................................................................ 1000A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc | Mitsubishi 三菱电机 | |||
HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offeri | Mitsubishi 三菱电机 | |||
Single IGBTMOD 1000 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplat | POWEREX | |||
HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si | Mitsubishi 三菱电机 | |||
Single IGBTMOD 1000 Amperes/1400 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, | POWEREX | |||
SCALE-2 Plug-and-Play Drivers Features Plug-and-play solution Allows parallel connection of IGBT modules For 2-level, 3-level and multilevel topologies Built-in isolated DC/DC power supply (master) Fiber-optic links (master) Built-in interface to 1SP0635D2S1(C) (slave) Duty cycle 0...100 Dynamic Advance | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
50 Watt DC-DC Converters Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C | POWER-ONE | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
Double Contact Bayonet Base S-8 Double Contact Bayonet Base | VCC | |||
Single Bayonet Base B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base | VCC | |||
B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base | CML | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
B-6 Double Contact Bayonet Base B-6 Double Contact Bayonet Base & G-2 Midget Screw Base & G-3 1/2 Miniature Bayonet Base | CML | |||
Double Contact Bayonet Base B-6 Double Contact Bayonet Base & G-2 Midget Screw Base & G-3 1/2 Miniature Bayonet Base | VCC | |||
Double Contact Bayonet Base S-8 Double Contact Bayonet Base | VCC | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA | PANJIT 強茂 | |||
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes | TRSYS Transys Electronics | |||
Four IGBTMOD 100 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from | POWEREX | |||
Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C. • Range: 30 (miniature), 30, 60, and 100 Amps at 600V a.c. • A range of fully shrouded HRC Fuse Holders having an advanced design. • They incorporate a high level of innovation, with enhanced performance characteristics and comply with the requirements of: CSA C22.2 No. 39 as well as IEC 269 | COOPER | |||
Trench Gate Design Dual IGBTMOD??100 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
Dual IGBTMOD 100 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
Trench Gate Design Dual IGBTMOD??100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
Dual IGBTMOD 100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn | POWEREX | |||
Dual IGBTMOD 100 Amperes/1700 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
HIGH POWER SWITCHING USE HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc | Mitsubishi 三菱电机 | |||
HIGH POWER SWITCHING USE HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc | Mitsubishi 三菱电机 | |||
HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s | Mitsubishi 三菱电机 | |||
Dual IGBTMOD 100 Amperes/600 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated f | POWEREX | |||
Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
HIGH POWER SWITCHING USE HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc | Mitsubishi 三菱电机 | |||
HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s | Mitsubishi 三菱电机 | |||
Dual IGBTMOD 100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
HIGH POWER SWITCHING USE HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc | Mitsubishi 三菱电机 | |||
Dual IGBTMOD NF-Series Module 100 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro | POWEREX | |||
Dual IGBTMOD 100 Amperes/1400 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from | POWEREX | |||
HIGH POWER SWITCHING USE HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc | Mitsubishi 三菱电机 | |||
Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro | POWEREX |
CM10产品属性
- 类型
描述
- 型号
CM10
- 功能描述
FPE04-6U NO FRONT PANEL
- RoHS
是
- 类别
盒,外壳,支架 >> 卡架 - 配件
- 系列
VectorPak™
- 标准包装
1
- 系列
VectorPak™
- 附件类型
EFP 模块
- 适用于相关产品
PCB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI |
24+ |
IGBT |
3000 |
英博尔一站式,全系列可订货渠道商。 |
|||
C-Media |
24+ |
N/A |
17049 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
KYOCERA |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
C-MEDIA |
24+ |
QFP48 |
10000 |
专营C-MEDIA进口原装正品现货假一赔十可开增票 |
|||
C-MEDIA |
2025+ |
LQFP48 |
4000 |
原装进口价格优 请找坤融电子! |
|||
C-MEDIA |
24+ |
LQFP-48 |
8800 |
原装现货假一罚十 |
|||
EPSON |
19+ |
SOP8 |
12395 |
||||
ICM/创芯微 |
23+ |
SOT23-6 |
6550 |
只做原装正品现货或订货!假一赔十! |
|||
MITSUBISHI/三菱 |
25+ |
IGBT |
3000 |
全新原装正品支持含税 |
|||
C-MEDIA |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
CM10规格书下载地址
CM10参数引脚图相关
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- CM-100
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- CL866(A...C)
- CL855(A...C)
- CL266P
- CL266
- CL169
- CL168
- CL166...P
- CL166(A...D)
- CL155...P
- CL155(A...D)
- CL152-4(A...C)
- CL152-3(A...C)
- CL151-4(A...C)
- CL151-3(A...C)
- CL066...P
- CL066(A...D)
- CL055...P
- CL055(A...D)
- CK942
- CK892
CM10数据表相关新闻
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CLXC8T245QRHLRQ1
2022-6-9CM1200HA-24J
CM1200HA-24J,当天发货0755-82732291全新原装现货或门市自取.
2020-8-15CM1213A-04S0二极管 ON 原装正品现货
CM1213A-04S0二极管 ON 原装正品现货
2020-6-28CM1213A-01SO
CM1213A-01SO
2020-4-26CLV系列VCO产品CLV1350E-LF原装现货
深圳市大唐盛世半导体有限公司 手 机:17727572380 。 电 话:0755-83226739 Q Q:626839837。 微信号:15096137729
2020-1-10CM0403CG
CM0403CG ,全新原装当天发货或门市自取0755-82732291.
2019-11-26
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