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CM10晶体管资料
CM10005别名：CM10005三极管、CM10005晶体管、CM10005晶体三极管
CM10005生产厂家：美国史普拉各电气公司
CM10005制作材料：Si-N+Darl
CM10005性质：功率放大 （L）
CM10005封装形式：直插封装
CM10005极限工作电压：400V
CM10005最大电流允许值：20A
CM10005最大工作频率：<1MHZ或未知
CM10005引脚数：2
CM10005最大耗散功率：
CM10005放大倍数：β=400
CM10005图片代号：E-44
CM10005vtest：400
CM10005htest：999900
- CM10005atest：20
CM10005wtest：0
CM10005代换 CM10005用什么型号代替：
CM10价格
参考价格：￥1215.7076
型号：CM100 品牌：Amprobe 备注：这里有CM10多少钱，2025年最近7天走势，今日出价，今日竞价，CM10批发/采购报价，CM10行情走势销售排行榜，CM10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CM10 | One-Touch Locking Style Small Sized Circular Connectors ◆OUTLINE CM10series(D6)typeisasmallsizedwaterproofcircularconnectorwithpushonlockingandturnoffunlockingmechanism.Theplugwillbeeasilylockedwiththereceptaclewhenyoupushon.Rotatingthecouplingring,theplugwillbeunlockedwhenyouneedtounmate. | DDK DDK Ltd. |  |   |
CM10 | G-3 1/2 Miniature 2 Pin Base WHEREINNOVATIONCOMESTOLIGHT | CML Chicago Miniature Lamp,inc |  | |
CM10 | Molded Mini-DYAD Description ClaresMoldedMiniDYADdryreedswitchesareideallysuitedforsmallswitchingsignalapplications.Thisswitchhassputteredtutheniumcontactsandanextraordinarysealstrength,achievedbyapatentedlasersealingoftheglass.Inalowlevelordryswitchingenvironments,both | Clare Clare, Inc. |  | |
CM10 | SMT Chip Inductors 文件：419.78 Kbytes Page：7 Pages | BournsBourns Electronic Solutions 伯恩斯 |  | |
CM10 | Base 文件：32.59 Kbytes Page：1 Pages | VCC Visual Communications Company |  | |
CM10 | SMT Chip Inductors 文件：449.64 Kbytes Page：9 Pages | BournsBourns Electronic Solutions 伯恩斯 | | |
CM10 | 包装：袋 描述：FPE04-6U NO FRONT PANEL 盒子，外壳，机架 卡机架配件 | VECTOR VECTOR ELECTRONICS and TECHNOLOGY, INC. |  | |
CM10 | 包装：袋 描述：FPE04-6U NO FRONT PANEL 盒子，外壳，机架 卡机架配件 | VECTOR VECTOR ELECTRONICS and TECHNOLOGY, INC. | | |
G-3 1/2 Miniature 2 Pin Base WHEREINNOVATIONCOMESTOLIGHT | CML Chicago Miniature Lamp,inc | | | |
Tilt Switch FEATURES •ResistanttoAmbientEnvironmentalConditions •CaseMaterial:TinPlated •HermeticallySealed&InertGasFilled •CustomizationAvailable | COMUS Comus International |  | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics |  | | |
RP-11 Single Contact Bayonet Base RP-11SingleContactBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Contact Bayonet Base RP-11SingleContactBayonetBase RP-11DoubleContactBayonetBase | VCC Visual Communications Company | | | |
Tilt Switch FEATURES •ResistanttoAmbientEnvironmentalConditions •CaseMaterial:TinPlated •CustomizationAvailable | COMUS Comus International | | | |
HIGH POWER SWITCHING USE ●IC................................................................1000A ●VCES..........................................................1700V ●InsulatedType ●2-elementsinapack APPLICATION GeneralpurposeinvertersServocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.Eachmoduleconsistsof oneIGBTinasingleconfigurationwithareverse-connectedsuperfastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeri | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 1000 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplat | POWEREX Powerex Power Semiconductors |  | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 1000 Amperes/1400 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
SCALE-2 Plug-and-Play Drivers Features Plug-and-playsolution AllowsparallelconnectionofIGBTmodules For2-level,3-levelandmultileveltopologies Built-inisolatedDC/DCpowersupply(master) Fiber-opticlinks(master) Built-ininterfaceto1SP0635D2S1(C)(slave) Dutycycle0...100 DynamicAdvance | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 |  | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics | | | |
50 Watt DC-DC Converters Wideinputvoltagefrom8...372VDC1,2or3isolatedoutputsupto48VDC4kVACI/Oelectricstrengthtestvoltag •Ruggedelectricalandmechanicaldesign •Outputsindividuallycontrolledwithexcellentdynamicproperties •Operatingambienttemperaturerange–40...71°C | POWER-ONE Power-One |  | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
Double Contact Bayonet Base S-8DoubleContactBayonetBase | VCC Visual Communications Company | | | |
Single Bayonet Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | VCC Visual Communications Company | | | |
B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | CML Chicago Miniature Lamp,inc | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics | | | |
B-6 Double Contact Bayonet Base B-6DoubleContactBayonetBase&G-2MidgetScrewBase&G-31/2MiniatureBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Double Contact Bayonet Base B-6DoubleContactBayonetBase&G-2MidgetScrewBase&G-31/2MiniatureBayonetBase | VCC Visual Communications Company | | | |
Double Contact Bayonet Base S-8DoubleContactBayonetBase | VCC Visual Communications Company | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) VOLTAGE-50to800VoltsCURRENT-10to35Amperes FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes MECHANICALDATA | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
HIGH CURRENT SILICON BRIDGE RECTIFIERS FEATURES ●ElectricallyIsolatedMetalCaseforMaximumHeatDissipation ●SurgeOverloadRatingsto400Amperes ●ThesebridgesareontheU/LRecognizedProductsListforcurrentsof10,25and35amperes | TRSYS Transys Electronics | | | |
Four IGBTMOD 100 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoffourIGBTTransistorsinanH-Bridgeconfiguration,witheachtransistorhavingareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C. •Range:30(miniature),30,60,and100Ampsat600Va.c. •ArangeoffullyshroudedHRCFuseHoldershavingan advanceddesign. •Theyincorporateahighlevelofinnovation,withenhanced performancecharacteristicsandcomplywiththerequirements of:CSAC22.2No.39aswellasIEC269 | COOPER COOPER |  | | |
Trench Gate Design Dual IGBTMOD??100 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 100 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Trench Gate Design Dual IGBTMOD??100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinhighfrequencyapplications;30kHzforhardswitchingapplicationsand60to70kHzforsoftswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconn | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 100 Amperes/1700 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................100A ●VCES..........................................................1700V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................100A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTsinahalf-bridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheats | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD 100 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedf | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................100A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION ACdriveinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTsinahalf-bridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheats | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD 100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................100A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD NF-Series Module 100 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 100 Amperes/1400 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................100A ●VCES.........................................................1700V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE ●IC...................................................................100A ●VCES..........................................................600V ●InsulatedType ●1-elementinapack APPLICATION Brake | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | |
CM10产品属性
- 类型
描述
- 型号
CM10
- 功能描述
FPE04-6U NO FRONT PANEL
- RoHS
是
- 类别
盒，外壳，支架 >> 卡架 - 配件
- 系列
VectorPak™
- 标准包装
1
- 系列
VectorPak™
- 附件类型
EFP 模块
- 适用于相关产品
PCB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
C-MEDIA |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
原装 |
24+ |
标准 |
47569 |
热卖原装进口 |
|||
创芯微/ICM |
24+ |
SOP16 |
20000 |
十年沉淀唯有原装 |
|||
ICM/创芯微 |
23+ |
SOT23-6 |
6550 |
只做原装正品现货或订货!假一赔十! |
|||
MITSUBISHI |
24+ |
IGBT |
3000 |
英博尔一站式，全系列可订货渠道商。 |
|||
三凌 |
23+ |
15 |
|||||
MITSUBISH |
25+ |
模块 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
MITSUBISHI/三菱 |
12+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
C-Media |
24+ |
N/A |
17049 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
C-MEDIA |
24+ |
TQFP48 |
20 |
全新原装,一手货源,全场热卖! |
CM10芯片相关品牌
CM10规格书下载地址
CM10参数引脚图相关
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CM10数据表相关新闻
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CLXC8T245QRHLRQ1
2022-6-9CM1200HA-24J
CM1200HA-24J，当天发货0755-82732291全新原装现货或门市自取.
2020-8-15CM1213A-04S0二极管 ON 原装正品现货
CM1213A-04S0二极管ON原装正品现货
2020-6-28CM1213A-01SO
CM1213A-01SO
2020-4-26CLV系列VCO产品CLV1350E-LF原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2020-1-10CM0403CG
CM0403CG，全新原装当天发货或门市自取0755-82732291.
2019-11-26
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- P95
- P96
- P97
- P98
- P99
- P100
- P101
