HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

Double Contact Bayonet Base

S-8 Double Contact Bayonet Base

S-8 Double Contact Bayonet Base

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单节电池保护IC

CM1002系列内置有高精度电压检测电路和延迟电路，通过检测电池的电压、电流，实现对电池的过充电、过放电、放电过电流、充电过电流、短路等保护，方案具有高可靠性、高精度、低功耗等特点，符合最新国标要求，适用于单节锂离子/锂聚合物可充电电池的保护电路。 1） 高精度电压检测功能：\n\n\n\n过充电保护电压\n3.500 V ~ 4.500 V\n精度 ±25 mV\n\n过充电迟滞电压\n0.000 V ~ 0.200 V\n精度 ±50 mV\n\n过放电保护电压\n2.000 V ~ 3.000 V\n精度 ±80 mV\n\n过放电迟滞电压\n0.000 V ~ 0.600 V\n精度 ±100 mV\n2） 放电过电流保护功能：\n\n\n\n过电流保护电压\n0.025 V ~ 0.250 V\n精度 ±15 mV\n\n短路保护电压\n0.1 V，0.2 V，0.4 V，1.0 V \n精度 ±30%\n3） 充电过流;

单节可充电锂电池保护C

CM1002/CM1003/CM1006系列产品是针对单节锂/铁电池的保护IC，可为电池提供过充电、过放电、放电过电流、充电过电流、短路等保护功能。系列芯片具有高可靠性、高精度、低功耗等特点，符合最新标准要求，满足不同的应用需求。

单节电池保护芯片

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp