HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

RP-11 Single Contact Bayonet Base

RP-11 Single Contact Bayonet Base

Contact Bayonet Base

RP-11 Single Contact Bayonet Base RP-11 Double Contact Bayonet Base

Tilt Switch

FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Customization Available

50 V, 10 A, high current silicon bridge rectifier

HIGH POWER SWITCHING USE

● IC ................................................................ 1000A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc

Single IGBTMOD 1000 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplat

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offeri

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 1000 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

颜色传感器

倾角开关

IGBT MODULES HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

文件：107.13 Kbytes Page：4 Pages

Mega Power Dual IGBTMOD??1000 Amperes/1700 Volts

文件：560.93 Kbytes Page：5 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

文件：514.26 Kbytes Page：9 Pages

Mega Power Dual IGBT 1000 Amperes/1700 Volts

文件：974.54 Kbytes Page：6 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

文件：841.76 Kbytes Page：9 Pages

Dual IGBT NX-Series Module 1000 Amperes/1200 Volts

文件：1.13919 Mbytes Page：9 Pages

Mega Power Chopper IGBTMOD 1000 Amperes/1700 Volts

文件：694.38 Kbytes Page：5 Pages

封装/外壳：模块 包装：散装 描述：IGBT MOD 1700V 1000A 3900W 分立半导体产品 晶体管 - IGBT - 模块

HIGH POWER SWITCHING USE INSULATED TYPE

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HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit board) • Wide voltage range: VZ = 2.0 V to 39 V • Easy-to-use because of the fine

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROMACHINED ACCELEROMETER

The XMMA series of silicon capacitive, micromachined accelerometers features; signal conditioning, a 4–pole low pass filter and temperature compensation. Zero–g offset full scale span and filter cut–off are factory set and require no external devices. A full system self–test capability verifies sy