G-3 1/2 Miniature 2 Pin Base

WHERE INNOVATION COMES TO LIGHT

Tilt Switch

FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Hermetically Sealed & Inert Gas Filled • Customization Available

Base

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RP-11 Single Contact Bayonet Base

RP-11 Single Contact Bayonet Base

Contact Bayonet Base

RP-11 Single Contact Bayonet Base RP-11 Double Contact Bayonet Base

Tilt Switch

FEATURES • Resistant to Ambient Environmental Conditions • Case Material : Tin Plated • Customization Available

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH POWER SWITCHING USE

● IC ................................................................ 1000A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offeri

Single IGBTMOD 1000 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplat

Single IGBTMOD 1000 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

Double Contact Bayonet Base

S-8 Double Contact Bayonet Base

Single Bayonet Base

B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base

B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base

B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base

B-6 Double Contact Bayonet Base

B-6 Double Contact Bayonet Base & G-2 Midget Screw Base & G-3 1/2 Miniature Bayonet Base

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

Double Contact Bayonet Base

B-6 Double Contact Bayonet Base & G-2 Midget Screw Base & G-3 1/2 Miniature Bayonet Base

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

Double Contact Bayonet Base

S-8 Double Contact Bayonet Base

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

Four IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from

Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C.

• Range: 30 (miniature), 30, 60, and 100 Amps at 600V a.c. • A range of fully shrouded HRC Fuse Holders having an advanced design. • They incorporate a high level of innovation, with enhanced performance characteristics and comply with the requirements of: CSA C22.2 No. 39 as well as IEC 269

Trench Gate Design Dual IGBTMOD??100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Trench Gate Design Dual IGBTMOD??100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

Dual IGBTMOD 100 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated f

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc

Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBTMOD NF-Series Module 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

Dual IGBTMOD 100 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................100A ● VCES ......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBTMOD A-Series Module 100 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

Chopper IGBTMOD 100 Amperes/600 Volts

Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interco

HIGH POWER SWITCHING USE INSULATED TYPE

● IC...................................................................100A ● VCES ..........................................................600V ● Insulated Type ● 1-element in a pack APPLICATION Brake

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................100A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake

Chopper IGBTMOD 100 Amperes/1200 Volts

Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interco

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

Six-IGBT IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the