| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CL313XL | One piece cast aluminum base 文件:153.5 Kbytes Page:2 Pages | LUMINIS | ||
HIGH-FREQUENCY TRANSISTOR NPN SILICON The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc | MOTOROLA 摩托罗拉 | |||
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. | NTE | |||
PIN Photodiode PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide | PANASONIC 松下 | |||
Reference Diode 文件:126.55 Kbytes Page:4 Pages | NSC 国半 | |||
Reference Diode 文件:126.55 Kbytes Page:4 Pages | NSC 国半 |
CL313XL规格书下载地址
CL313XL参数引脚图相关
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CL313XL数据表相关新闻
CL31B104KCFNNNE原装正品现货资料
CL31B104KCFNNNE原装正品现货资料
2020-6-28CL31A226KOCLNND
CL31A226KOCLNND
2020-4-8CL21Y106KOQ4PNE
CL21Y106KOQ4PNE
2019-11-21CL31B104MBCNNNC
CL31B104MBCNNNC
2019-10-12CL21C561JBANNND
CL21C561JBANNND
2019-10-12CL21Y106KOQ4PNE
CL21Y106KOQ4PNE
2019-9-30
DdatasheetPDF页码索引
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