| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CJD13003 | NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistor manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications. MARKING: FULL PART NUMBER | CENTRAL |   | |
CJD13003 | Surface mount Transistor-Bipolar Power (>1A) NPN High Voltage | CENTRAL | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 400V 1.5A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 400V 1.5A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
CJD13003产品属性
- 类型
描述
- Case：
DPAK(TO-252)
- Configuration/ Description：
NPN High Voltage
- Polarity：
NPN
- IC MAX：
1.5A
- PD MAX：
15W
- VCEO MAX：
400V
- hFE MIN：
8
- hFE MAX：
40
- @VCE：
2V
- VCE(SAT) MAX：
1V
- @IC：
1A
- @IB：
250mA
- Cob TYP：
20pF
- fT MIN：
4MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
2021 |
TO-251 |
524 |
||||
CJ/长电 |
21+ |
TO-251 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-251 |
24192 |
绝对原装正品全新进口深圳现货 |
|||
CENTRAL |
24+ |
TO-252 |
36800 |
||||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
Central |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价CJD13003即刻询购立享优惠#长期有货 |
|||
CJ/长电 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
CJ/长电 |
24+ |
TO-251 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
T |
TO-251-3L |
22+ |
6000 |
十年配单,只做原装 |
CJD13003规格书下载地址
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DdatasheetPDF页码索引
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